MRF89XAM9A
TABLE 2-1:
Desi
MRF89XAM9A BILL OF MATERIALS
gnat
Value
Description
Manufacturer
Part Number
or
C1
0.047 μF
Capacitor, Ceramic, 10V, ±10%, X7R, SMT
Murata
GRM155R71A473KA01D
0402
C2
0.22 μF
Capacitor, Ceramic, 16V, ±10%, X7R, SMT
Murata
GRM155R71C224KA12D
0402
C3
1 μF
Capacitor, Ceramic, 6.3V, ±10%, X5R, SMT
Murata
GRM188R60J105KA01D
0603
C4
30 pF
Capacitor, Ceramic, 50V, ±5%, UHI-Q NP0,
Johanson Technology
250R07S300JV4T
SMT 0402
C5
1.8 pF
Capacitor, Ceramic, 50V, ±0.1 pF, UHI-Q
Johanson Technology
500R07S1R8BV4
NP0, SMT 0402
C6
C7
33 pF
Designator not used
Capacitor, Ceramic, 50V, ±5%, C0G, SMT
Murata
GRM1555C1H330JZ01D
0402
C8
0.1 μF
Capacitor, Ceramic, 16V, ±10%, X7R, SMT
Murata
GRM155R71C104KA88D
0402
C9
680 pF
Capacitor, Ceramic, 50V, ±5%, C0G, SMT
Murata
GRM1555C1H681JA01D
0402
C10
0.01 μF
Capacitor, Ceramic, 16V, ±10%, X7R, SMT
Murata
GRM155R71C103KA01D
0402
C11
1.0 pF
Capacitor, Ceramic, 50V, ±0.1 pF, UHI-Q
Johanson Technology
500R07S1R0BV4
NP0, SMT 0402
C12
0.9 pF
Capacitor, Ceramic, 50V, ±0.1 pF, UHI-Q
Johanson Technology
500R07S0R9BV4
NP0, SMT 0402
FL1
TA0281A Filter, SAW, 902–928 MHz
Tai-saw Technology
TA0281A
L1
L2
L3
L4
L5
L6
R1
R2
10 nH
100 nH
5.6 nH
5.6 nH
10 nH
1 Ω
100K Ω
Inductor, Ceramic, ±5%, SMT 0402
Inductor, Ceramic, ±5%, SMT 0402
Inductor, Wirewound, ±5%, SMT 0402
Inductor, Wirewound, ±5%, SMT 0402
Designator not used
Inductor, Ceramic, ±5%, SMT 0402
Resistor, 1%, ±100 ppm/ 0 C, SMT 0402
Resistor, 5%, ±100 ppm/ 0 C, SMT 0402
Johanson Technology
Johanson Technology
Johanson Technology
Johanson Technology
Johanson Technology
Vishay/Dale
Yageo
L-07C10NJV6T
L-07CR10JV6T
L-07W5N6JV4T
L-07W5N6JV4T
L-07C10NJV6T
CRCW04021R00FKED
RC0402JR-07100KL
R3
6.8K Ω
Resistor, 1%, ±100
ppm/ 0
C, SMT 0402
Yageo
RC0402FR-076K8L
U1
MRF89XA Transceiver, Ultra Low-Power, Integrated
Microchip Technology
MRF89XA-I/MQ
Sub-GHz
X1
12.8 MHz Crystal, ±10 ppm, 15 pF, ESR 100 ohms,
Abracon
ABM3B-155-12.800MHz-T
SMT 5 x 3.2mm
? 2011 Microchip Technology Inc.
Preliminary
DS75017A-page 11
相关PDF资料
MRX-001-433DR-B MODULE RECEIVER 433MHZ 18DIP
MRX-002-433DR-B MODULE RECEIVER 433MHZ 18DIP
MRX-002SL-433DR-B MODULE RCVR 433MHZ SAW LN 24DIP
MRX-005-915DR-B MODULE RECEIVER 915MHZ 18DIP
MRX-005SL-915DR-B MODULE RCVR 915MHZ SAW LN 24DIP
MRX-007-433DR-B MODULE RECEIVER 433MHZ 18DIP
MRX-008-433DR-B MODULE RECEIVER 433MHZ 18DIP
MRX-009-433DR-B MODULE RECEIVER 433MHZ 18DIP
相关代理商/技术参数
MRF89XAM9AT-I/RM 制造商:Microchip Technology Inc 功能描述:915 MHz Ultra Low-Power Sub-GHz Transceiver Module
MRF89XAT-I/MQ 功能描述:射频收发器 868/915/950 MHz Sub-GHz transceiver RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray
MRF8HP21080HR3 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21080HR5 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21080HSR3 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21080HSR5 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21130HR3 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21130HR5 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray